Part Number Hot Search : 
TS7900B BC264C 7805T X5649P GP30G CEP10N6 0E7XXXF 18VNV
Product Description
Full Text Search

CY7C1165V18 - 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

CY7C1165V18_465178.PDF Datasheet

 
Part No. CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY7C1161V18-300BZI CY7C1161V18-333BZI CY7C1163V18-300BZI CY7C1163V18-300BZC CY7C1165V18-300BZXC CY7C1165V18-333BZXC CY7C1165V18-333BZC CY7C1165V18-333BZI CY7C1165V18-333BZXI CY7C1165V18-300BZI CY7C1165V18-300BZC CY7C1165V18-300BZXI CY7C1163V18-333BZI CY7C1176V18-333BZXI CY7C1176V18-300BZXI CY7C1176V18-300BZC CY7C1163V18-300BZXC
Description 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

File Size 949.91K  /  29 Page  

Maker

Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CY7C1165V18-400BZXC
Maker: Cypress Semiconductor Corp
Pack: ETC
Stock: Reserved
Unit price for :
    50: $0.00
  100: $0.00
1000: $0.00

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY7C1161V18-300BZI CY7C1161V18-333BZI CY7C1163V18-30 Datasheet PDF Downlaod from Datasheet.HK ]
[CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY7C1161V18-300BZI CY7C1161V18-333BZI CY7C1163V18-30 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for CY7C1165V18 ]

[ Price & Availability of CY7C1165V18 by FindChips.com ]

 Full text search : 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)


 Related Part Number
PART Description Maker
R1QFA7218AB R1QCA7218AB R1QCA7236AB R1QLA7236AB R1 72-Mbit QDRII SRAM 4-word Burst
Renesas Electronics Corporation
CY7C1263KV18-400BZC CY7C1265KV18-550BZC 36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
Cypress
CY7C1563XV18-633BZXC CY7C1565XV18-633BZXC 72-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
Cypress
CY7C2263XV18-633BZXC CY7C2263XV18-600BZXC CY7C2265 36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Cypress
UPD44325082 UPD44325082F5-E50-EQ2 UPD44325092F5-E5 36M-BIT QDRII SRAM 2-WORD BURST OPERATION
NEC Corp.
R1Q2A3636ABG60RB0 R1Q3A3636ABG60RB0 R1Q4A3636ABG60 36-Mbit QDR⑩II SRAM 2-word Burst
36-Mbit QDR垄芒II SRAM 2-word Burst
Renesas Electronics Corporation
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
Renesas Technology / Hitachi Semiconductor
 
 Related keyword From Full Text Search System
CY7C1165V18 EEprom CY7C1165V18 Number CY7C1165V18 motor CY7C1165V18 Lead forming CY7C1165V18 molex
CY7C1165V18 circuit diagram CY7C1165V18 m85049 CY7C1165V18 rectifier CY7C1165V18 volts CY7C1165V18 Ic on line
 

 

Price & Availability of CY7C1165V18

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.5196042060852